insulated gate bipolar transistor是什么意思，insulated gate bipolar transistor的意思翻译、用法、同义词、例句

绝缘栅双极型晶体管

Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

绝缘栅双极晶体管。 N沟道增强模式，高速开关。

An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices.

绝缘栅双极晶体管（IGBT）器件描述工具，使用户可以快速准确地创建功率半导体器件的平均和动态模型。

Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.

pWM逆变器在应用中会产生共模电压， 共模电压在IGBT的高速开关期间产生充放电电流。

The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).

介绍了一种用于大功率IGBT厚膜驱动电路的380 V系统输入、多路输出辅助开关电源。

Low running costs with a high operating efficiency. SENDON GENIUS UPS uses IGBT(insulated gate bipolar transistor) technology in the inverter to achieve its high efficiency…

采用IGBT（绝缘栅双极性晶体管）技术的高效率的设计，从而有效的降低了运行成本。

In this paper a new equivalent circuit model is constructed within a multi-MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors.

本文建构了一个结合多捆MOS的新等效电路模型来模拟绝缘闸极双载子电晶体（IGBT）电流感应器。

The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd generation IGBT.

探讨了IGBT功率电路尖峰电压产生的原因，并针对第三代IGBT，给出了适应不同功率的吸收电路。

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

A method to simulate the characteristics of insulated gate bipolar transistor(IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。

This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).

本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。

To enlarge output power of power electronic system based on Insulated Gate Bipolar Transistor(IGBT), a number of IGBT modules or power electronic circuits can be paralleled.

为了扩大电力电子装置的输出容量，可以对IGBT器件或者电力电子线路进行并联。

Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.

本发明提供一种绝缘栅双极晶体管（IGBT），所述绝缘栅双极晶体管占据小面积并且抑制热击穿。

Phase-shifted FB-ZVZCS-PWM converter solves the problem mentioned above, and insulated gate bipolar transistor(IGBT) is fit for the lag-arm.

PWM变换器解决了滞后臂软开关负载范围问题，滞后臂较适合用绝缘栅极双极型晶体管（IGBT）。

This paper introduces the Insulated gate bipolar transistor (IGBT) inverter for arc welding. The prin(?)

介绍了采用绝缘门极双极晶体管（IGBT）作为开关元件的弧焊逆变器。

Insulated Gate Bipolar Transistor(IGBT) as controllable switch, has been applied widely.

绝缘栅双极二级管（IGBT）作为一种可控开关，获得了广泛应用。