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chemical vapor deposition是什么意思,chemical vapor deposition的意思翻译、用法、同义词、例句

输入单词

常用词典

  • 化学气相沉积;化学汽相淀积

  • 例句

  • Large current hot cathode glow discharge was used for plasma chemical vapor deposition of diamond films. It improved deposition rate and films quality efficiently.

    大电流热阴极辉光放电用于等离子体化学气相沉积金刚石膜,有效地提高了沉积速率和膜品质。

  • The relation between characteristics of hot cathode glow discharge and diamond film deposition techniques in hot cathode glow discharge plasma chemical vapor deposition process was discussed.

    研究了在热阴极辉光放电等离子体化学气相沉积金刚石膜过程中,热阴极辉光放电特性与金刚石膜沉积工艺的关系。

  • After following the chemical vapor deposition and carbonization of carbon-carbon composites in an argon graphite under the protection of heat-treatment, to improve and enhance the material properties.

    经过化学气相沉积和炭化之后的碳一碳复合材料在氩气的保护下进行高温石墨化处理,以改善和提高材料性能。

  • The article has introduced the application and development tendency of techniques of film making with chemical vapor deposition in all fields.

    本文介绍了化学气相沉积制膜技术在国民经济各个领域中的应用及其发展趋势。

  • Hot filament chemical vapor deposition is one of the developed ways to deposit the diamond at present.

    热丝法化学气相沉积金刚石膜是目前已经发展成沉积金刚成熟的方法之一。

  • A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.

    提出了一种新颖的多孔硅表面钝化技术,即采用微波等离子体辅助的化学气相沉积(MPCVD)方法在多孔硅上沉积金刚石薄膜。

  • In order to modify the surface properties of the particles, composite particles are prepared by the process of Chemical Vapor Deposition (CVD) in a fluidized bed reactor.

    为了对颗粒表面进行改性,在自行设计组装的流化床反应器中,利用化学气相沉积法(CVD)制备了不同的复合颗粒。

  • Material growth is normally real-time monitored by using laser interference curve in the metal organic chemical vapor deposition(MOCVD) growth system.

    金属有机化学气相沉积(MOCVD)生长系统中通常用激光干涉曲线对材料生长进行实时监控。

  • Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.

    直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。

  • In present work, (100) oriented CVD diamond films with different quality obtained by a hot-filament chemical vapor deposition (HFCVD) technique were used to fabricate radiation detectors.

    本工作利用热丝化学气相沉积(HFCVD)法获得了(100)取向不同质量的金刚石薄膜,并制备了CVD金刚石辐射探测器。

  • A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.

    在掺杂P室采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜。

  • The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition(CVD) system.

    利用微波等离子体化学气相沉积(CVD)设备,在硅基片上进行了金刚石薄膜的沉积实验。

  • This article introduces processing of plasma chemistry and application of sputter coating and plasma-enhanced chemical vapor deposition in powder metallurgy especially.

    介绍了等离子体化学工艺,特别着重介绍了溅射镀膜与等离子体化学气相沉积在粉末冶金中的应用。

  • Polysilicon thin films are deposited by catalytic chemical vapor deposition method. The substrate temperature is 300 ℃ and catalytic hot wire is tungsten filament.

    以金属钨为催化热丝,采用热丝催化化学气相沉积,在300℃的玻璃衬底上沉积多晶硅薄膜。

  • In this study we designed and made the preparation equipment of nano-silicon powder by LICVD (laser induced chemical vapor deposition), and introduced the designing thought of key parts.

    本研究自行设计制作了激光诱导化学气相沉积(LICVD)纳米硅粉制备设备,并对关键部件的设计思路进行了阐述。

  • Carbon nanotubes in experiments were synthesized by hot filament chemical vapor deposition.

    所用的碳纳米管是用热灯丝化学气相沉积法合成的。

  • Ultra-high Vacuum Chemical Vapor Deposition (UHVCVD) was a good choice, it provided a super clean, low temperature, low pressure ambient, and controlled thin films' growth precisely.

    超高真空化学气相沉积(UHVCVD)具有超净的生长环境、能够在低温、低压下生长锗硅材料,可精确控制薄膜生长等优点。

  • Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition(HFCVD) on glass at low-temperatures.

    采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。

  • The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition, is studied.

    对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究。

  • This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition(ECRCVD) method to prepare amorphous silicon nitride(SiN_x)film.

    探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。

  • Nano-sized silicon films with large area were prepared by normal Low Pressure Chemical Vapor Deposition method.

    利用普通低压化学气相沉积技术在玻璃衬底上制备了大面积的纳米硅薄膜。

  • The paper focused on the research of gas flow automatic control method of the MOCVD(Metal Organic Chemical Vapor Deposition).

    研究了金属有机物化学气相沉积(MOCVD)系统中气体流量的自动控制方法。

  • Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more.

    课堂讲授和实验课重点介绍了基本的工艺技术,如扩散、氧化、光刻、化学汽相淀积以及其它。

  • Diamond film was coated by the hot filament chemical vapor deposition method.

    在热丝化学气相沉积装置中,制备金刚石薄膜。

  • We studied the relationship between the RF power, the chamber pressure and the film stress for deposited the silicon nitride film by Plasma Enhance Chemical Vapor Deposition(PECVD).

    研究了在等离子体增强化学气相沉积(PECVD)法制备氮化硅薄膜时,射频功率和腔室压力对氮化硅薄膜应力的影响以及应力与沉积速率的关系。

  • Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.

    采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池。

  • In this paper, substrate materials of diamond films by chemical vapor deposition are discussed.

    讨论了化学气相沉积金刚石薄膜的各种衬底材料。

  • High quality diamond thin films were grown by hot-filament chemical vapor deposition.

    采用热丝化学气相沉积生长出优异的金刚石薄膜。

  • 网络扩展资料

    化学气相沉积(Chemical Vapor Deposition,简称CVD)是通过在气相中加热化学反应物质从而在物体表面生成固态薄膜的一种化学加工技术。以下是对该词汇的详细解释:

    例句

    • The thin film was deposited on the substrate using chemical vapor deposition.(利用化学气相沉积在基板上沉积了薄膜。)

    • 化学气相沉积是一种普遍用于生产半导体材料的技术。(Chemical vapor deposition is a commonly used technique for producing semiconductor materials.)

    用法

    化学气相沉积是一种用于制备薄膜的重要方法。它通常用于制备半导体材料、陶瓷材料、金属材料、玻璃等材料的薄膜。化学气相沉积技术可以通过控制反应物的浓度、温度、气压等条件,来控制沉积薄膜的厚度、形貌和材料组成等特性。由于其高效、可控、重复性好等优点,CVD在微电子、光电子、材料科学等领域得到了广泛的应用。

    解释

    化学气相沉积是一种化学加工技术,其原理是在反应室内将反应物质加热至高温,使其在气态下分解产生活性物种,然后活性物种在基板表面发生化学反应,形成固态薄膜。该方法的优点是可以制备高质量、均匀、可控的薄膜,并且可以在大面积、复杂形状的基板上沉积薄膜。

    近义词

    化学气相沉积的近义词包括化学气相沉淀、化学气相沉积法、化学气相沉积技术等。

    反义词

    化学气相沉积的反义词为物理气相沉积(Physical Vapor Deposition,简称PVD)。物理气相沉积是通过在真空环境下将材料加热到蒸发温度,从而使得材料蒸发并沉积在基板表面的一种技术。与CVD相比,PVD制备的薄膜具有高致密性、高纯度、低缺陷等特点。但相比之下,CVD技术可以制备出更加复杂、多样化的薄膜,并且可以制备厚度更大的薄膜。

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